Effect of Counter-doping Thickness on Double-gate MOSFET Characteristics
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: JSTS:Journal of Semiconductor Technology and Science
سال: 2010
ISSN: 1598-1657
DOI: 10.5573/jsts.2010.10.2.130